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| HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE(sat) tfi = = = = 600 V 48 A 2.7 V 275 ns Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g C l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard package JEDEC TO-247 AD High frequency IGBT 2nd generation HDMOS TM process High current handling capability MOS Gate turn-on - drive simplicity Applications l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 2.7 V V A mA nA V l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V l l Easy to mount with 1 screw (isolated mounting screw hole) Switching speed for high frequency applications High power density (c) 1997 IXYS All rights reserved 92730I (3/97) IXGH 24N60A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 135 40 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 11 30 Inductive load, T J = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased R G Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 15 0.6 150 110 1.5 25 15 0.8 250 400 2.3 200 270 120 15 40 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.83 K/W 0.25 K/W 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % IXGH 24N60A characteristic curves are located on the IXGH 24N60AU1 data sheet. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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